MORESEMI MSN3402
N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● VDS = 30V,ID = 3A RDS(ON) < 75mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Lead Free Application
● Battery protection
● Load switch
● Power management PIN Configuration Marking and pin assignment D G SOT-23 top view S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN3402 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 3 20 0.9 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note