MORESEMI MSN7002E
N-Channel Enhancement Mode Power MOS FET
| Part No. | MSN7002E |
|---|---|
| Datasheet | MSN7002E Download |
| Manufacturer | MORESEMI |
| Description | N-Channel Enhancement Mode Power MOS FET |
| Buy | Stock & Price |
GENERAL FEATURES
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected Lead Free Application
●Direct logic-level interface: TTL/CMOS
●Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc.
●Battery operated systems
●Solid-state relays PIN Configuration Marking and pin assignment SOT-23 top view Schematic diagram Package Marking And Ordering Information Device Marking Device MSN7002E Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ =150℃) Drain Current-Pulsed (Note 1) TA =25℃ TA =100℃ Maximum Power Dissipation Operating Junction an
