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MSN7002E - N-Channel Enhancement Mode Power MOS FET

Features

  • VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • ESD protected Lead Free.

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Datasheet Details

Part number MSN7002E
Manufacturer MORESEMI
File Size 334.21 KB
Description N-Channel Enhancement Mode Power MOS FET
Datasheet download datasheet MSN7002E Datasheet

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Full PDF Text Transcription

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MSN7002E 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc.
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