MSP0406W Description
MSP0406W -40V(D-S) P-Channel Enhancement Mode Power MOS FET General.
MSP0406W Key Features
- VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- DC-DC converter