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MSP0625D
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● High side switch for full bridge converter ● DC/DC converter for LCD display
Lead Free
PIN Configuration
Marking and pin assignment
TO-252 -2Ltop view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSP0625D
MSP0625D
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-
MSP0625D Datasheet
