MORESEMI MSP2301B
P-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● PWM applications
● Load switch PIN Configuration Lead Free Marking and pin assignment SOT-23 top view D G S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package A1SHB MSP2301B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current -Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±12 -2.6 -13 0.9 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2)