MORESEMI MSP3415E
P-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected Lead Free Application
● PWM application
● Load switch Marking and pin Assignment PIN Configuration SOT-23 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP3415E SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±10 -4 -30 1.4 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Juncti