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MSP3415E - P-Channel Enhancement Mode Power MOSFET

Key Features

  • VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • ESD protected Lead Free.

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Datasheet Details

Part number MSP3415E
Manufacturer MORESEMI
File Size 332.23 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MSP3415E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSP3415E -20V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.