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MSP4403W - P-Channel Enhancement Mode Power MOSFET

Key Features

  • VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.

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Datasheet Details

Part number MSP4403W
Manufacturer MORESEMI
File Size 415.85 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MSP4403W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSP4403W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.