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MSP4435W - P-Channel Enhancement Mode Power MOSFET

Key Features

  • VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number MSP4435W
Manufacturer MORESEMI
File Size 460.58 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MSP4435W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSP4435W -30V(D-S) P-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.