Datasheet4U Logo Datasheet4U.com

MT1403A - N-Channel Power MOSFET

Download the MT1403A datasheet PDF. This datasheet also covers the MT1403A-MOS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

JuO 2009 Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A 100% UIL test RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either s

Key Features

  • General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT1403A-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT1403A
Manufacturer MOS-TECH
File Size 403.19 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MT1403A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT1403-RG Standar T-1 LED Lamps marktech optoelectronics
MT1401 Hall-Effect Magnetic Position Sensors MagnTek
MT1401A Hall-Effect Magnetic Position Sensors MagnTek
MT1401A-T Hall-Effect Magnetic Position Sensors MagnTek
MT1401AT Hall-Effect Magnetic Position Sensors MagnTek

Other Datasheets by MOS-TECH

Part Number Description
MT1803 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
07$ N-Channel PowerTrench® MOSFET MOS-TECH Semiconductor Co.,LTD 07$ N-Channel PowerTrench® MOSFET 25 V, 30 A, 8.5 mΩ Features General Description JuO 2009 „ Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A „ Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A „ 100% UIL test „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.