• Part: MT3108
  • Manufacturer: MOS-TECH
  • Size: 414.08 KB
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MT3108 Key Features

  • RDS(on) = mΩ ( Typ.) @ VGS = 10V, ID = 5A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS pliant
  • DC to DC convertors / Synchronous Rectification
  • Continuous (TC = 85oC)5A
  • Pulsed

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MT3108 Description

This N-Channel MOSFET is producedusing PRVWHFK Vemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D G DS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGSS ID IDM EAS IAR EAR Gate to Source Voltage ±20 V Drain Current...