MT3108 Overview
This N-Channel MOSFET is producedusing PRVWHFK Vemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D G DS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGSS ID IDM EAS IAR EAR Gate to Source Voltage ±20 V Drain Current...
MT3108 Key Features
- RDS(on) = mΩ ( Typ.) @ VGS = 10V, ID = 5A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
- RoHS pliant
- DC to DC convertors / Synchronous Rectification
- Continuous (TC = 85oC)5A
- Pulsed