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MT3108 Datasheet N-channel Powe MOSFET

Manufacturer: MOS-TECH

Overview:  MOS-TECH Semiconductor Co.,LTD  07 N-Channel Power MOSFET 100V, 5A,.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This N-Channel MOSFET is producedusing PRVWHFK Vemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

D G DS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGSS ID IDM EAS IAR EAR Gate to Source Voltage ±20 V Drain Current Drain Current -Continuous (TC = 85oC)5A - Pulsed (Note 1) 30 A

Key Features

  • RDS(on) = mΩ ( Typ. ) @ VGS = 10V, ID = 5A.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(on).
  • High power and current handling capability.
  • RoHS compliant.

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