MT3116 Product details
This page provides the datasheet information for the MT3116, a member of the MT3116-MOS N-Channel Powe MOSFET family.
Description
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
DC-DC primary bridge
DC-DC Synchronous rectification
Features
- Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
- Fast Switching Speed.
- Low Gate Charge.
- High Performance Trench Technology for Extr emely Low
RDS(on).
- High Power and Current Handling Capability.
- RoHS Compliant
General.