MT3116 Key Features
- Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extr emely Low
- High Power and Current Handling Capability
- RoHS pliant
- Part: MT3116
- Manufacturer: MOS-TECH
- Size: 533.05 KB
Related MOS-TECH Datasheets
| Part Number | Description |
|---|---|
| MT3108 | N-Channel Powe MOSFET |
| MT301 | P-Channel Power MOSFET |
| MT3240 | N-Channel Power MOSFET |
| MT3245A | N-Channel Power MOSFET |
| MT3258 | N-Channel Power MOSFET |
MT3116 Description
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications DC-DC primary bridge DC-DC Synchronous rectification Hot swap D G DS TO-220 G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain to Source Voltage Gate...