MT3116
Description
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extr emely Low
- High Power and Current Handling Capability
Applications
- DC-DC primary bridge
