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MT3116 - N-Channel Powe MOSFET

Download the MT3116 datasheet PDF. This datasheet also covers the MT3116-MOS variant, as both devices belong to the same n-channel powe mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC-DC primary bridge DC-DC Synchronous rectification

Key Features

  • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extr emely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT3116-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT3116
Manufacturer MOS-TECH
File Size 533.05 KB
Description N-Channel Powe MOSFET
Datasheet download datasheet MT3116 Datasheet

📁 Similar Datasheet

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MT3113B 125V 130A N-Channel Power MOSFET MT Semiconductor
MT3114 100V 140A N-Channel Power MOSFET MT Semiconductor

Other Datasheets by MOS-TECH

Part Number Description
MT3108 N-Channel Powe MOSFET
MT301 P-Channel Power MOSFET
MT3240 N-Channel Power MOSFET
MT3245A N-Channel Power MOSFET
MT3258 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD MT3116 N-Channel Power MOSFET 100V, 176A, 3.5mΩ Features • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extr emely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.