MT3275
Description
This N-Channel MOSFET is produced using mos-tech Semiconductor’s adcanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- RDS(on) = 3mΩ ( Typ.)@ VGS = 10V, ID = 75A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
Applications
- DC to DC convertors / Synchronous Rectification
