MT3275 Overview
This N-Channel MOSFET is produced using mos-tech Semiconductor’s adcanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage...
MT3275 Key Features
- RDS(on) = 3mΩ ( Typ.)@ VGS = 10V, ID = 75A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
- RoHS pliant
- DC to DC convertors / Synchronous Rectification
- Continuous Continuous
- Continuous (TC = 25oC, Package Limited)
- Pulsed