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MT3407 - P-Channel Power MOSFET

Download the MT3407 datasheet PDF. This datasheet also covers the MT3407-MOS variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range Notes: ≦1. Surface Mounted on 1” x.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT3407-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT3407
Manufacturer MOS-TECH
File Size 1.00 MB
Description P-Channel Power MOSFET
Datasheet download datasheet MT3407 Datasheet

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Other Datasheets by MOS-TECH

Part Number Description
MT3421 P-Channel Power MOSFET
MT301 P-Channel Power MOSFET
MT3108 N-Channel Powe MOSFET
MT3116 N-Channel Powe MOSFET
MT3240 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD P-Channel Enhancement Mode Field Effect Transistor MT3407 Product Summary VDS= -30V ID= -4.1A (VGS= -10V) ≦ ΩRDS(ON) 60m @VGS= -10V ≦ ΩRDS(ON) 95m @VGS= -4.5V Applications： ▪ Power Management in Notebook Computer ▪ Portable Equipment and Battery Powered Systems. Features Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range Notes: ≦1.