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MT3407 Datasheet P-channel Power MOSFET

Manufacturer: MOS-TECH

Overview: MOS-TECH Semiconductor Co.,LTD 茂鈿半導體股份有限公司 P-Channel Enhancement Mode Field Effect Transistor MT3407 Product Summary VDS= -30V ID= -4.1A (VGS= -10V) ≦ ΩRDS(ON) 60m @VGS= -10V ≦ ΩRDS(ON) 95m @VGS= -4.5V Applications： ▪ Power Management in Notebook puter ▪ Portable Equipment and Battery Powered Systems.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range Notes: ≦1. Surface Mounted on 1” x.

More Datasheets from MOS-TECH

Part Number Description
MT3421 P-Channel Power MOSFET
MT301 P-Channel Power MOSFET
MT3108 N-Channel Powe MOSFET
MT3116 N-Channel Powe MOSFET
MT3240 N-Channel Power MOSFET
MT3245A N-Channel Power MOSFET
MT3258 N-Channel Power MOSFET
MT3258B N-Channel Power MOSFET
MT3275 N-Channel Power MOSFET
MT3710 N-Channel Powe MOSFET

MT3407 Distributor