MOS-TECH MT3421
This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance. These devices a re well suit ed for portable electronics applications: load s witching and power management, battery charging circuits and DC/DC conversion.| Part No. | MT3421 |
|---|---|
| Datasheet | MT3421 Download |
| Manufacturer |  MOS-TECH |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
DFEATURES
● –4.3 A, –25 V. RDS(ON) = 0.08 Ω @ VGS = –4.5 V RDS(ON) = 0.11 Ω @ VGS = –2.5 V● Low gate charge (3.6 nC typical)
● High performance trench technology for extremely low RDS(ON)
● SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D S SOT-23 G
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
