Datasheet Details
| Part number | MT3421 |
|---|---|
| Manufacturer | MOS-TECH |
| File Size | 712.81 KB |
| Description | P-Channel Power MOSFET |
| Datasheet |
 MT3421 Datasheet
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General Description
This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance.
Key Features
- 4.3 A,.
- 25 V. RDS(ON) = 0.08 Ω @ VGS =.
- 4.5 V RDS(ON) = 0.11 Ω @ VGS =.
- 2.5 V.
- Low gate charge (3.6 nC typical).
- High performance trench technology for extremely low RDS(ON).
- SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D S SOT-23 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Volt.