MT3421 Key Features
- 4.3 A, -25 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.11 Ω @ VGS = -2.5 V
- Low gate charge (3.6 nC typical)
- High performance trench technology for extremely
- SuperSOTTM -23 provides low RDS(ON) and 30%
- Part: MT3421
- Manufacturer: MOS-TECH
- Size: 712.81 KB
Related MOS-TECH Datasheets
| Part Number | Description |
|---|---|
| MT3407 | P-Channel Power MOSFET |
| MT301 | P-Channel Power MOSFET |
| MT3108 | N-Channel Powe MOSFET |
| MT3116 | N-Channel Powe MOSFET |
| MT3240 | N-Channel Power MOSFET |
MT3421 Description
This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance. These devices a re well suit ed for portable electronics applications: load s witching and power management, battery charging circuits and DC/DC conversion.