MT3421
Description
This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance.
Key Features
- 4.3 A, –25 V. RDS(ON) = 0.08 Ω @ VGS = –4.5 V RDS(ON) = 0.11 Ω @ VGS = –2.5 V
- Low gate charge (3.6 nC typical)
- High performance trench technology for extremely
- SuperSOTTM -23 provides low RDS(ON) and 30%
