MT3710
Description
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
Applications
- DC to DC convertors / Synchronous Rectification
