MT3710 Overview
This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D GDS TO-220 G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source...
MT3710 Key Features
- RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
- RoHS pliant
- DC to DC convertors / Synchronous Rectification
- Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed
- Derate