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MT3710 - N-Channel Powe MOSFET

Download the MT3710 datasheet PDF. This datasheet also covers the MT3710-MOS variant, as both devices belong to the same n-channel powe mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC to DC convertors / Synchronous Rectification D GDS TO-220

Key Features

  • RDS(on) = 12mΩ ( Typ. ) @ VGS = 10V, ID = 49A.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(on).
  • High power and current handling capability.
  • RoHS compliant General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT3710-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT3710
Manufacturer MOS-TECH
File Size 882.79 KB
Description N-Channel Powe MOSFET
Datasheet download datasheet MT3710 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD Feb 2010 MT3710 N-Channel Power® MOSFET 100V, 57A, 12mΩ Features • RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant General Description This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.