FEATURES
rDS(on) = 4.5mΩ, VGS = 10V, ID = 18A rDS(on) = 6.5mΩ, VGS = 4.5V, ID = 17A High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability GENERAL DESCRIPTION
APPLICATIONS
DC/DC converters RoHS Compliant Branding Dash 1 2 3 4 SO-8 5 54 63 72 81 MOSFET MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) PD Power
MOS-TECH
