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MT4410 - N-Channel Power MOSFET

Download the MT4410 datasheet PDF. This datasheet also covers the MT4410-MOS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

DC/DC converters

Key Features

  • rDS(on) = 4.5mΩ, VGS = 10V, ID = 18A.
  • rDS(on) = 6.5mΩ, VGS = 4.5V, ID = 17A.
  • High performance trench technology for extremely low rDS(on).
  • Low gate charge.
  • High power and current handling capability General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4410-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT4410
Manufacturer MOS-TECH
File Size 425.80 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MT4410 Datasheet

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Other Datasheets by MOS-TECH

Part Number Description
MT4407 P-Channel MOSFET
MT4408L N-Channel Power MOSFET
MT4409 P-Channel Power MOSFET
MT4420 N-Channel Power MOSFET
MT4435 30V P-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD MT4410 N-Channel PowerTrench® MOSFET 30V, 18A, 4.5mΩ Features „ rDS(on) = 4.5mΩ, VGS = 10V, ID = 18A „ rDS(on) = 6.5mΩ, VGS = 4.5V, ID = 17A „ High performance trench technology for extremely low rDS(on) „ Low gate charge „ High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.