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MT4435BDY - P-Channel Power MOSFET

Download the MT4435BDY datasheet PDF. This datasheet also covers the MT4435BDY-MOS variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • SOP-8 package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4435BDY-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT4435BDY
Manufacturer MOS-TECH
File Size 252.89 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MT4435BDY Datasheet

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Other Datasheets by MOS-TECH

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Mos-Tech Semiconductor Co.,LTD. MT4435BDY P-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -8A 15@ VGS=-10V 20@ VGS=-4.5V NOTE：The MT4435BDY is available in a lead-free package G ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 ℃ Symbol VDS VGS ID Limit -30 ±25 -8 - Pulse d b IDM -40 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -2.4 2.