Datasheet Summary
茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
P-Channel Enhancement Mode Field Effect Transistor
Features
- Super high dense cell design for low RDS(ON)
- Rugged and reliable
- Simple drive requirement
- SOP-8 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-30V -8A
15@ VGS=-10V 20@ VGS=-4.5V
NOTE：The MT4435BDY is available in a lead-free package
ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125 ℃
Symbol
VDS VGS ID
Limit
-30 ±25 -8
- Pulse d b
IDM -40
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
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