MT4435BDY Description
茂钿半導體股份有限公司 Mos-Tech Semiconductor Co.,LTD. MT4435BDY P-Channel Enhancement Mode Field Effect Transistor.
MT4435BDY Key Features
- Super high dense cell design for low RDS(ON)
- Rugged and reliable
- Simple drive requirement
- SOP-8 package
- 30V -8A
- 30 ±25 -8
- Pulse d b
- 2.4 2.5
- 55 to 150