Datasheet Summary
茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
P-Channel Enhancement Mode Field Effect Transistor
Features
- Super high dense cell design for low RDS(ON)
- Rugged and reliable
- Simple drive requirement
- TO-252 package
NOTE：The MT4435L is available in a lead-free package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
98@ VGS=-10V
-30V -15
130 @ VGS=-4.5V
ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
-30 ±20 -15
- Pulse d b
IDM -24
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
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