MOS-TECH MT4936
The MT4936 is available in a lead-free package D1 G1 D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 30 ±20 6.6 - Pulse d b IDM 28 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.7 2.5 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2005 Mos-Tech Semiconductor 1 http// 茂钿半導體股份有限公司 Mos-Tech Semiconductor Co.,LT| Part No. | MT4936 |
|---|---|
| Datasheet | MT4936 Download |
| Manufacturer |  MOS-TECH |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SO-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 6.6A 32@ VGS=10V 43@ VGS=4.5V NOTE：
