Datasheet Summary
P-Channel Enhancement Mo de
Field Effect Transistor
Product Summary
VDS= -20V ID= -5A RDS(ON) 60m
@VGS= -10V/-4.9A RDS(ON) 75m
@VGS= -4.5V/-3.6A
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS pliant.
Applications ˖
Load Switch. PWM...
