MOS-TECH MT50N03
The MT50N03 is available in a lead-free package ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 30 ±20 50 - Pulse d b IDM 350 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 60 70 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 40 ℃/W ©2007Mos-Tech Semiconductor 1 http// 茂钿半導體股份有限公司 Mos-Tech Semiconductor Co.,LTD.| Part No. | MT50N03 |
|---|---|
| Datasheet | MT50N03 Download |
| Manufacturer |  MOS-TECH |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 50A 6@ VGS=10V 9@ VGS=4.5V NOTE： MT50N03 ELECTRICAL
