MOS-TECH MT50P03
The MT50P03 is available in a lead-free package G S DS G D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -50 - Pulse d b IDM -105 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.8 150 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2007 Mos-Tech Semiconductor 1 http// 茂钿半導體股份有限公司 Mos-Tech Semiconductor Co.| Part No. | MT50P03 |
|---|---|
| Datasheet | MT50P03 Download |
| Manufacturer |  MOS-TECH |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -50A 20@ VGS=-10V 28 @ VGS=-4.5V NOTE：
