• Part: MT6680
  • Manufacturer: MOS-TECH
  • Size: 530.59 KB
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MT6680 Key Features

  • Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A
  • Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A
  • HBM ESD protection level of 3KV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS pliant

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MT6680 Description

This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. D D D D SO-8 Pin 1 G S S S D D D D G S S S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS...