MT6680
Description
This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance.
Key Features
- Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A HBM ESD protection level of 3KV typical (note 3)
