FEATURES
Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A HBM ESD protection level of 3KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant GENERAL DESCRIPTION
D D D D SO-8 Pin 1 G S S S D D D D G S S S MOSFET MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating an
MOS-TECH
