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MT6680 Datasheet N-channel Power MOSFET

Manufacturer: MOS-TECH

Overview: MOS-TECH Semiconductor Co.,LTD MT6680 N-Channel Power MOSFET 30V, 15A, 9.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.

D D D D SO-8 Pin 1 G S S S D D D D G S S S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating an

Key Features

  • Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A.
  • Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A.
  • HBM ESD protection level of 3KV typical (note 3).
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability.
  • RoHS compliant General.

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