Datasheet4U Logo Datasheet4U.com

MT6680 - N-Channel Power MOSFET

Download the MT6680 datasheet PDF. This datasheet also covers the MT6680-MOS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A.
  • Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A.
  • HBM ESD protection level of 3KV typical (note 3).
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability.
  • RoHS compliant General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT6680-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT6680
Manufacturer MOS-TECH
File Size 530.59 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MT6680 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MT6601 Bluetooth Transceiver and Baseband Processor MTK
MT6605 Single chip SoC MediaTek
MT6612 Application Notes MediaTek
MT6616 Application Note MediaTek
MT6620 PEF LED Driver Aerosemi

Other Datasheets by MOS-TECH

Part Number Description
MT6010 N-Channel Power MOSFET
MT6011 P-Channel Power MOSFET
MT6401 P-Channel Power MOSFET
MT6405 P-Channel Power MOSFET
MT6968 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOS-TECH Semiconductor Co.,LTD MT6680 N-Channel Power MOSFET 30V, 15A, 9.0mΩ Features „ Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A „ HBM ESD protection level of 3KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant General Description This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.