MT75N23
Description
This N-Channel MOSFET is produced using PRVWHFK Semiconductor’s adcanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- RDS(on) = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
Applications
- DC to DC Convertors / Synchronous Rectification
