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MT8810 - Dual N-Channel Power MOSFET

Download the MT8810 datasheet PDF. This datasheet also covers the MT8810-MOS variant, as both devices belong to the same dual n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-ChannelMOSFETisproducedusing0267(&+ Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • ! 7.1A, 20V rDS(ON) =0.0Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT8810-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT8810
Manufacturer MOS-TECH
File Size 1.08 MB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet MT8810 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
07 Dual N-Channel Power MOSFET MOS-TECH Semiconductor Co.,LTD D 07 Dual N-Channel Power026)(7  Features ! 7.1A, 20V rDS(ON) =0.0Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! Battery charge ! Battery disconnect circuits General Description This N-ChannelMOSFETisproducedusing0267(&+ Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.