MT8810
Description
This N-ChannelMOSFETisproducedusing0267(&+ Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- Extended VGS range (±12 V) for battery applications !
- HBM ESD Protection Level of 3.5kV Typical (note 3) !
- High performance trench technology for extremely low rDS(ON) !
- Low profile TSSOP-8 package
