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MT9410 - N-Channel Power MOSFET

Download the MT9410 datasheet PDF. This datasheet also covers the MT9410-MOS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

performance.

Features

  • 5.6 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ V GS = 4.5 V.
  • Low gate charge (9.5 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT9410-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT9410
Manufacturer MOS-TECH
File Size 309.81 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MT9410 Datasheet

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Other Datasheets by MOS-TECH

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MT9435A P-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
07 MOS-TECH Semiconductor Co.,LTD May 2009 07 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on -state resistance and yet maintain superior swit ching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required. Applications • DC/DC converter • Load switch • Motor drives Features • 5.6 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ V GS = 4.5 V • Low gate charge (9.
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