MT9410
Description
This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on -state resistance and yet maintain superior swit ching performance.
Key Features
- 5.6 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ V GS = 4.5 V
- Low gate charge (9.5 nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- DC/DC converter
