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MT9926 - N-Channel Power MOSFET

Download the MT9926 datasheet PDF. This datasheet also covers the MT9926-MOS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • ‡ Super high dense cell design for low R DS(ON) ‡ Rugged and reliable ‡ Simple drive requirement  ‡ SO-8 package Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć Symbol VDS VGS ID - Pulse d b IDM Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IS PD TJ,TSTG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT9926-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT9926
Manufacturer MOS-TECH
File Size 394.61 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MT9926 Datasheet

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Other Datasheets by MOS-TECH

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MT9926 N-Channel Enhancement Mode Field Effect Transistor 3URGXFW6XPPDU PRODUCT SUMMARY VDSS ID RDS(ON) (m¡) Typ 22 @ VGS=4.5V 20V 6A 35 @ VGS=2.5V Features ‡ Super high dense cell design for low R DS(ON) ‡ Rugged and reliable ‡ Simple drive requirement  ‡ SO-8 package Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć Symbol VDS VGS ID - Pulse d b IDM Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IS PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambient  Rth JA   5 4 6 3 7 2 8 1 D2 D2 D1 D1 Pin 1 SO-8 G2 S2 G1 S1 SO-8 Limit Unit 20 V ±12 V 6 A 20 A 1.7 A 2.
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