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SYS84000RKX-12 - 4M x 8 SRAM MODULE

Download the SYS84000RKX-12 datasheet PDF. This datasheet also covers the SYS84000RKX-10 variant, as both devices belong to the same 4m x 8 sram module family and are provided as variant models within a single manufacturer datasheet.

General Description

The SYS84000RKX is a plastic 32Mbit Static RAM Module housed in a standard 38 pin Single In-Line package organised as 4M x 8 with access times of, 85,100, or 120 ns.

The module is constructed using eight 512Kx8 SRAMs in TSOPII packages mounted onto both sides of an FR4 epoxy substrate.

Key Features

  • Access Times of 85/100/120 ns. Low Power Disipation: Operating 770 mW (Max. ) Standby-L Version (CMOS) 4.84mW (Max. ).
  • 5 Volt Supply ± 10%.
  • Completely Static Operation.
  • Equal Access and Cycle Times.
  • Low Voltage VCC Data Retention.
  • On-board Decoding & Capacitors.
  • 38 Pin Single-In-Line package (SIP).
  • Upgrade path to SYS88000RKX (64Mbits).
  • Block Diagram Pin Definition NC A20 Vcc WE D2 D3 D0 A1 A2 A3 A4 GND D5 A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SYS84000RKX-10_MOSAIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SYS84000RKX-12
Manufacturer MOSAIC
File Size 119.13 KB
Description 4M x 8 SRAM MODULE
Datasheet download datasheet SYS84000RKX-12 Datasheet

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Other Datasheets by MOSAIC

Part Number Description
SYS84000RKX-10 4M x 8 SRAM MODULE
SYS84000RKX-85 4M x 8 SRAM MODULE
SYS82000RKXC-10 2M x 8 SRAM MODULE
SYS82000RKXC-12 2M x 8 SRAM MODULE
SYS82000RKXC-70 2M x 8 SRAM MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 4M x 8 SRAM MODULE SYS84000RKX - 85/10/12 Issue 1.7 : April 2001 Description The SYS84000RKX is a plastic 32Mbit Static RAM Module housed in a standard 38 pin Single In-Line package organised as 4M x 8 with access times of, 85,100, or 120 ns. The module is constructed using eight 512Kx8 SRAMs in TSOPII packages mounted onto both sides of an FR4 epoxy substrate. This offers an extremely high PCB packing density. The device is offered in standard and low power versions, with the -L module having a low voltage data retention mode for battery backed applications. Buffering is provided on the module to reduce the output capacitance to 8pF(Typ). Note: CS and OE on the module, should be used with care to avoid on and off board bus contention.