S30C80 Datasheet | Mospec Semiconductor

MOSPEC Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. - Low Forward Voltage. - Low Switching noise. - High Current Capacity - Guarantee Reverse Avalanche. - Guard-Ring for Stress Protection. - Low Power Loss & High efficiency. - 150 Operating Junction Temperature - Low Stored Charge Majority Carrier Conduction. - Plastic Material used Carries Underwriters Laboratory ESD: 4KV(Min.) Human-Body Model In pliance with EU Ro Hs 2002/95/EC directives S30C70 Thru S30C100 SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 70-100 VOLTS TO-220AB MAXIMUM RATINGS Characteristic Symbol S30C70 S30C80 S30C90 S30C100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM RMS Reverse Voltage Average Rectifier Forward Current Per diodes Total Device (Rated VR),TC=125 Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half-wave, single phase, 60Hz) Operating and Storage Junction Temperature Range VR(RMS) IF(AV) IFM IFSM TJ , TSTG 80 90 100 56...