• Part: S30C90
  • Description: Schottky Barrier Power Rectifiers
  • Manufacturer: Mospec Semiconductor
  • Size: 255.88 KB
Download S30C90 Datasheet PDF
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Datasheet Summary

MOSPEC Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. - Low Forward Voltage. - Low Switching noise. - High Current Capacity - Guarantee Reverse Avalanche. - Guard-Ring for Stress Protection. - Low Power Loss & High efficiency. - 150 Operating Junction Temperature - Low Stored Charge Majority Carrier Conduction. - Plastic Material used Carries Underwriters Laboratory ESD: 4KV(Min.) Human-Body Model In...