S30S50 Datasheet | Mospec Semiconductor

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O In pliance with EU Ro Hs 2002/95/EC directives S30S30 thru S30S60 SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 30-60 VOLTS TO-263 (D2-PAK) MAXIMUM RATINGS Characteristic Symbol S30S Unit 30 35 40 45 50 60 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM 30 35 40 45 50 60 RMS Reverse Voltage VR(RMS) 21 25 28 32 35 42 Average Rectifier Forward Current (per diode) Total Device (Rated VR), TC=125 IF(AV) 15 30 Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFM IFSM 20 200 Operating and Storage Junction Temperature Range TJ ,...