S60D35 Datasheet | Mospec Semiconductor

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Laboratory ＊Flammability Classification 94V-O ＊Pb free ＊In pliance with EU Ro Hs directives S60D30 Thru S60D60 SCHOTTKY BARRIER RECTIFIERS 60 AMPERES 30-60 VOLTS TO-3P MAXIMUM RATINGS Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current ( per diode ) Total Device (Rated VR),TC=100℃ Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) VRRM VRWM VR VR(RMS) IF(AV) S60D 30 35 40 45 50 60 30 35 40 45 50 60 21 25 28 32 35 42 30 60 Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM Unit Operating and Storage Junction Temperature Range TJ , TSTG -65 to +150 ℃ THERMAL RESISTANCES Typical Thermal Resistance junction to...