SRF1060C Datasheet | Mospec Semiconductor

MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Laboratory ＊ESD: 8KV(Min.) Human-Body Model ＊Flammability Classification 94V-O ＊Pb free ＊In pliance with EU Ro Hs directives ＊“G” Green product Schottky Barrier RECTIFIERS 10 AMPERES 60 VOLTS ITO-220AB MAXIMUM RATINGS Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current ( per doode ) Total Device (Rated VR), TC=125℃ Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) VRRM VRWM VR VR(RMS) IF(AV) IFM IFSM Junction Temperature Storage Temperature Range Tstg ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage ( IF =5 Amp TC = 25℃) ( IF =5 Amp TC = 100℃) Typical Thermal Resistance junction to case Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) Symbol VF Rθ j-c...