• Part: SRF2065
  • Description: Dual Schottky Barrier Power Rectifiers
  • Manufacturer: Mospec Semiconductor
  • Size: 190.22 KB
Download SRF2065 Datasheet PDF
Mospec Semiconductor
SRF2065
SRF2065 is Dual Schottky Barrier Power Rectifiers manufactured by Mospec Semiconductor.
MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features - Low Forward Voltage. - Low Switching noise. - High Current Capacity - Guarantee Reverse Avalanche. - Guard-Ring for Stress Protection. - Low Power Loss & High efficiency. - 150℃ Operating Junction Temperature - Low Stored Charge Majority Carrier Conduction. - Plastic Material used Carries Underwriters Laboratory Mechanical Data *Case :JEDEC ITO-220AB molded plastic body *Terminals: Plated lead, solderable per MIL-STD-750, Method 2026 *Polarity: As marked *Mounting Torque: 4-6kg.cm *Weight:1.7 g approx. *ESD: 8KV(Min.) Human-Body Model *In pliance with EU Ro Hs 2002/95/EC directives MAXIMUM RATINGS Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM RMS Reverse Voltage VR(RMS) Average Rectifier Forward Current ( Per diode ) Total Device (Rated VR),TC=125℃ IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20k Hz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFM IFSM Operating and Storage Junction Temperature Range TJ , TSTG ELECTRIAL CHARACTERISTICS...