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MPQ5850GJ-AEC1 - 36V Smart Diode Controller

This page provides the datasheet information for the MPQ5850GJ-AEC1, a member of the MPQ5850 36V Smart Diode Controller family.

Datasheet Summary

Description

The MPQ5850 is a smart diode controller that can drive an external N-channel MOSFET to replace a Schottky diode for reverse input protection.

Features

  • Built to Handle Tough Automotive Transients: o -36V Blocking Voltage o Load Dump Up to 42V o Cold Crank Down to 0V o Rectifies AC Frequency Up to 100kHz o Strong Gate Drive Ability: 170mA PullUp and 430mA Pull-Down.
  • Extended Vehicle Battery Life: o Low Quiescent Current in Standby Mode (4μA) o Low Quiescent Current in Steady State (30μA).
  • Reduced Board Size: o Available in a TSOT23-8 (2mmx3mm) Package.
  • Additional Features: o 20mV Ultra-Low Dropout o Integrate.

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Datasheet preview – MPQ5850GJ-AEC1

Datasheet Details

Part number MPQ5850GJ-AEC1
Manufacturer MPS
File Size 2.09 MB
Description 36V Smart Diode Controller
Datasheet download datasheet MPQ5850GJ-AEC1 Datasheet
Additional preview pages of the MPQ5850GJ-AEC1 datasheet.

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Full PDF Text Transcription

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DESCRIPTION The MPQ5850 is a smart diode controller that can drive an external N-channel MOSFET to replace a Schottky diode for reverse input protection. The device’s 20mV ultra-low dropout minimizes power loss and enables a low minimum input voltage, which makes the MPQ5850 well-suited for cold-crank conditions in automotive applications. The 4μA shutdown current also makes the device ideal for batterypowered applications. The ultra-fast transient response meets stringent ISO16750 requirements. The MPQ5850 integrates an internal boost to provide a boost voltage that turns on the external N-channel MOSFET, even at a low input voltage (VIN). An open-drain, power good signal indicates when the external N-channel MOSFET is fully on. The MPQ5850 is available in a TSOT23-8 (2mmx3mm) package.
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