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MSK4105 - HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE

General Description

The MSK4105 is a hermetic high temperature half bridge configuration SiC (Silicon Carbide) power MOSFET design with parallel SiC recovery diodes.

The hermetic design makes it ideal for use in oil/gas/down-hole, aerospace and other extreme environment applications.

Key Features

  • Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power.

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Datasheet Details

Part number MSK4105
Manufacturer MSK
File Size 492.56 KB
Description HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE
Datasheet download datasheet MSK4105 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 FEATURES: Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C 10A Continuous Output Current at Tc=190°C Available in Three Lead Bend Configurations Package Isolated for High Voltage Isolation Contact MSK for MIL-PRF-38534 Qualification Status DESCRIPTION: The MSK4105 is a hermetic high temperature half bridge configuration SiC (Silicon Carbide) power MOSFET design with parallel SiC recovery diodes. The hermetic design makes it ideal for use in oil/gas/down-hole, aerospace and other extreme environment applications.