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MSV SEMI
MBD6100L
Monolithic Dual Switching Diode
FEATURE
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current
Symbol VR IF
I FM(surge)
Value 70 200 500
Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θ JA PD
R θ JA T J , T stg
Max 225
1.
MBD6100L Datasheet
