MSV MBTA42
High Voltage Transistors
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.MAXIMUM RATINGS
Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value MBTA42 MBTA43 300 200 300 200 6.0 6.0 500 Unit Vdc Vdc Vdc mAdc 3 1 2 SOT–23 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) TA = 25°C PD 225 Derate above 25°C 1.8 Thermal Resistance, Junction to Ambient R θJA 556 Total Device Dissipation Alumina Substrate, (2) TA = 25°C PD 300 Derate above 25°C 2.4 Thermal Resistance, Junction to Ambient R θJA 417 Junction and Storage Temperature T J , T stg –55 to +150ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) mW mW/°C °C/W mW mW/°C °C/W °C Characteristic Symbol Min Max OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) MBTA42 MBTA43 Collector–Base Breakdown Voltage (I C= 100 µ...