MT02P05N3 - P-Channel MOSFET

Features

Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. $.

MT Semiconductor

Datasheet Details

Part number	MT02P05N3
Manufacturer	MT Semiconductor
File Size	410.77 KB
Description	P-Channel MOSFET
Datasheet	MT02P05N3 Datasheet
Additional preview pages of the MT02P05N3 datasheet.

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Full PDF Text Transcription

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MT02P05N3 3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary VDS = -20V ID= -40A RDS(ON) = 5.8m @VGS = -4.5V RDS(ON) = 7.5m @VGS= -2.5V Features Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. $SSOLFDWLRQV Notebook Computer Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG PIN1 Limit -20 ±12 -40 -120 2.

Published: Jul 2, 2025 |