The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MT03022P
N-Channel Enhancement Mode MOSFET
Feature Description
30V/240A RDS(ON)=2.0m (typ.)@VGS = 10V RDS(ON)=2.4m (typ.) @VGS = 4.5V 100% avalanche tested Excellent CdV/dt effect decline Halogen - Free Device Available
Applications
High Frequency Switching and Synchronous Rectification BLDC
G DS
TO-220FB-3L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.