MT Semiconductor MT03022P
The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C.| Part No. | MT03022P |
|---|---|
| Datasheet | MT03022P Download |
| Manufacturer |  MT Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
30V/240A RDS(ON)=2.0m (typ.)@VGS = 10V RDS(ON)=2.4m (typ.) @VGS = 4.5V 100% avalanche tested Excellent CdV/dt effect decline Halogen - Free Device AvailableAPPLICATIONS
High Frequency Switching and Synchronous Rectification BLDC G DS TO-220FB-3LABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 240 240 720 90 80 96 346 125 80 8.3 5.3 -55 to 150 1 Units V V A A A mJ W W °C MT03022P Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.4 Max 15 60 0.48 Units °C/W...
