MT Semiconductor MT0620D
N-Channel Power MOSFET
| Part No. | MT0620D |
|---|---|
| Datasheet | MT0620D Download |
| Manufacturer |  MT Semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 60V,50A● RDS(ON) = 12mΩ (Typ.)@VGS = 1 0 V
● RDS(ON) = 15mΩ (Typ.) @VGS = 4.5V
● Low Total Gate Charge
● Low Reverse Transfer Capacitance
● Improved dv/dt Capability
● Fast Switching Speed *HQHUDO 'HVFULSWLRQ 7KLV 1 &KDQQHO 026)(7 LV SURGXFHG XVLQJ 026 7(&+ 6HPLFRQGXFWRU¶V DGYDQFHG 3RZHU7UHQFK SURFHVV WKDW KDV EHHQ HVSHFLDOO\ WDLORUHG WR PLQLPL]H WKH RQ VWDWH UHVLVWDQFH DQG \HW PDLQWDLQ VXSHULRU VZLWFKLQJ SHUIRUPDQFH $SSOLFDWLRQV '& '& SULPDU\ EULGJH '& '& 6\QFKURQRXV UHFWLILFDWLRQ +RW VZDS D G S D G S TO-252-2L
ABSOLUTE MAXIMUM RATINGS
(TC=25℃ unless otherwise specified) Symbol VDSS VGSS ID IDM PD RθJC RθJA TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 TC = 25℃ TC = 100℃ Power Dissipation TC = 25℃ Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Max. 60 ±20 50 32 150 30 5 50 -55 to +175 Units V V A A A W ℃/W ℃/W ℃ ZZZ PWVHPL FRP MT0620DELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min.
