MT11G07N5 Overview
Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
MT11G07N5 datasheet by MT Semiconductor.
| Part number | MT11G07N5 |
|---|---|
| Datasheet | MT11G07N5-MTSemiconductor.pdf |
| File Size | 1.46 MB |
| Manufacturer | MT Semiconductor |
| Description | N-Channel MOSFET |
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Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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