MT19N15
N-Channel 150V Power MOS FET
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Typ RDS (on)=240m:@ VGS =10V,ID =2A
Fast Switching Speed
Low Gate Charge
High Power and Current Handling Capability
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7KLV1&KDQQHO026)(7LVSURGXFHGXVLQJ0267(&+ 6HPLFRQGXFWRU¶VDGYDQFHG3RZHU7UHQFKSURFHVVWKDWKDV been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
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Power Switching application Hard switched and high frequency circuits
TO-252-2L
Absolute Maximum Ratings (TA=25ćunless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD
TJ,TSTG
Limit
150 ±20
5 11 35 -55 To 150
Unit
A W ć
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RșJA
ć/W
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