MT20025S
Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement
$SSOLFDWLRQV
LED Display
Absolute Maximum Ratings(TA = 25 unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousϛ@Tj=125ć
- Pulse d b
Drain-source Diode Forward Currentϛ Maximum Power Dissipationϛ Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID
IS PD
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientϛ
Rth JA
Limit
20 ± 90 270 125
-55 to 150
Unit
V V A A A
ć
ć/W
ZZZPWVHPLFRP
ELECTRICAL CHARACTERISTICS (TA=25ć unless otherwise noted)
Parameter
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERITICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING...
