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MT2312 - N-Channel MOSFET

General Description

S OT 23-3L par ts ar e s hipped i n tape.

T he carrier tape is made from a d issipative (carbon filled) polycarbonate resin.

Key Features

  • G ‡ Super high dense cell design for low RDS(ON) ‡ Rugged and reliable ‡ Simple drive requirement $.

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Datasheet Details

Part number MT2312
Manufacturer MT Semiconductor
File Size 571.00 KB
Description N-Channel MOSFET
Datasheet download datasheet MT2312 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT2312  1&KDQQHO(QKDQFHPHQW0RGH)LHOG (IIHFW7UDQVLVWRU Product Summary  PRODUCT SUMMARY VDSS ID RDS(ON) (m¡) Typ D 30@ VGS=4.5V 20V 4.5A 50@ VGS=2.5V Features G ‡ Super high dense cell design for low RDS(ON) ‡ Rugged and reliable ‡ Simple drive requirement $SSOLFDWLRQV ‡ LED Display Absolute Maximum Ratings(TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć - Pulse d b Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG S D S G SOT-23 Limit 20 ±12 3.6 12 1.25 1.