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MT3055L - N-Channel MOSFET

Key Features

  • S ‡ Super high dense cell design for low RDS(ON) ‡ Rugged and reliable ‡ Simple drive requirement Absolute Maximum Ratings(TA = 25 unless otherwise noted) D G S D-PAK TO-252-2L Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć - Pulse d b Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 25 ±12 15 48 1.7 55 -55 to 150 Unit V V A A A W ć.

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Datasheet Details

Part number MT3055L
Manufacturer MT Semiconductor
File Size 239.77 KB
Description N-Channel MOSFET
Datasheet download datasheet MT3055L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT3055L  1&KDQQHO(QKDQFHPHQW0RGH)LHOG (IIHFW7UDQVLVWRU Product Summary  PRODUCT SUMMARY VDSS ID 25V 15A RDS(ON) (m¡) Typ 55 @ VGS=4.5V 60 @ VGS=2.5V D G Features S ‡ Super high dense cell design for low RDS(ON) ‡ Rugged and reliable ‡ Simple drive requirement Absolute Maximum Ratings(TA = 25 unless otherwise noted) D G S D-PAK TO-252-2L Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć - Pulse d b Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 25 ±12 15 48 1.