MT30N03
Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252-2L package
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DC-DC primary bridge DC-DC Synchronous rectification Hot swap
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous嘌@Tj=125ć
- Pulse d b
Drain-source Diode Forward Current嘌 Maximum Power Dissipation嘌 Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID
IS PD
TJ,TSTG
S G TO-252-2L
Limit
30 ±20 30 90 30 50 -55 to 175
Unit
ć
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambient嘌
Rth JA
ć/W
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ELECTRICAL CHARACTERISTICS (TA=25ć unless otherwise noted)
Parameter
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERITICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance DAYNAMIC...
