MT3206
Description
These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-st ate resist ance, provide superior swit ching performance, and wit hstand high energy pulse in t he avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC conver ters, and high ef ficiency swit ching f or power management in portable and battery operated products.
Features
- 50A, 60V, RDS(on) = 0.01Ω @VGS = 10 V
- Low gate charge ( typical 43 n C)
- Low Crss ( typical 85 p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR...
