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MT3206 - 60V N-Channel MOSFET

Description

These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology.

Features

  • 50A, 60V, RDS(on) = 0.01Ω @VGS = 10 V.
  • Low gate charge ( typical 43 nC).
  • Low Crss ( typical 85 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt.

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Datasheet Details

Part number MT3206
Manufacturer MT Semiconductor
File Size 778.78 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet MT3206 Datasheet

Full PDF Text Transcription

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MT3206 MOS-TECH Semiconductor Co.,LTD MT3206 60V N-Channel MOSFET QFET TM General Description These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-st ate resist ance, provide superior swit ching performance, and wit hstand high energy pulse in t he avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC conver ters, and high ef ficiency swit ching f or power management in portable and battery operated products. Features • 50A, 60V, RDS(on) = 0.
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