Datasheet Details
| Part number | MT3223 |
|---|---|
| Manufacturer | MT Semiconductor |
| File Size | 1.53 MB |
| Description | N-Channel MOSFET |
| Datasheet | MT3223-MTSemiconductor.pdf |
|
|
Overview: MT3223 N-Channel Enhancement Mode MOSFET Feature.
| Part number | MT3223 |
|---|---|
| Manufacturer | MT Semiconductor |
| File Size | 1.53 MB |
| Description | N-Channel MOSFET |
| Datasheet | MT3223-MTSemiconductor.pdf |
|
|
|
30V/70A RDS(ON)=2.8m (typ.)@VGS = 10V RDS(ON)=3.8m (typ.) @VGS = 4.5V 100% avalanche tested Excellent CdV/dt effect decline Halogen - Free Device Available Applications High Frequency Switching and Synchronous Rectification BLDC G DS TO-220-3L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 70 60 240 90 80 96 346 125 80 8.3 5.3 -55 to 150 1 Units V V A A A mJ W W °C MT3223 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.4 Max 15 60 0.48 Units °C/W °C/W °C/W Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.0 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 0.4 SWITCHING PARAMETERS Qg(10V) Qgs Qgd Qoss tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge VGS=10V, VDS=15V, ID=20A Gate Drain Charge Output Cha
Compare MT3223 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| MT3225 | 30V 150A N-Channel MOSFET |
| MT3202 | 60V 65A N-Channel MOSFET |
| MT3203 | 30V 100A N-Channel MOSFET |
| MT3204 | 45V 176A N-Channel Power MOSFET |
| MT3205 | 60V 110A N-Channel Power MOSFET |
| MT3205A | 60V 140A N-Channel Power MOSFET |
| MT3205AF | 60V 120A N-Channel Power MOSFET |
| MT3205B | 60V 140A N-Channel Power MOSFET |
| MT3206 | 60V N-Channel MOSFET |
| MT3206A | 60V N-Channel MOSFET |