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MT34P50/B/S
P-Channel
Low
Q g
MOSFET
- 40V,-50A,17mΩ
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RDS (on)=17m at VGS = -10V,ID= -12A
High performance trench technology for extremely low RDS (on)
Low Gate Charge High power and current handing capability
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This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
MT34P50 Datasheet
