MT34P50
MT34P50/B/S
P-Channel
Low
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MOSFET
- 40V,-50A,17mΩ
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RDS (on)=17m at VGS = -10V,ID= -12A
High performance trench technology for extremely low RDS (on)
Low Gate Charge High power and current handing capability
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This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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G DS
TO-220FB-3L
TO-263-2L
TO-252-2L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Single pulse avalanche...
